Ultrathin textured polycrystalline oxide with a high electron conduction efficiency prepared by thermal oxidation of thin polycrystalline silicon film on n+ polycrystalline silicon
نویسندگان
چکیده
This letter presents an ultrathin textured polycrystalline oxide (polyoxide) ( ~100 A) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Qhd of the textured polyoxide could be more than 3000 C/cm2 even under 100 mA/cm” stressing.
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